Formation of CuIn1 - xAlxSe2 thin films studied by Raman scattering
Identifieur interne : 002E64 ( Main/Repository ); précédent : 002E63; suivant : 002E65Formation of CuIn1 - xAlxSe2 thin films studied by Raman scattering
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Abstract
CuIn1 - xAlxSe2 (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu-In-Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm-1 with resolution of 0.3 cm-1. Sequential formation of InxSey, Cu2 -xSe, CuInSe2 (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn1 - xAlxSe2 products, the A1 phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm-1 to 186 cm-1.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Formation of CuIn<sub>1</sub> <sub>-</sub> <sub>x</sub>Al<sub>x</sub>Se<sub>2</sub> thin films studied by Raman scattering</title><author><name sortKey="Olejnicek, J" uniqKey="Olejnicek J">J. Olejnicek</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Nebraska at Kearney, 905 W. 25th</s1><s2>St. Kearney, NE 68849-1150</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>St. Kearney, NE 68849-1150</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague 8</s2><s3>CZE</s3><sZ>1 aut.</sZ></inist:fA14><country>République tchèque</country><wicri:noRegion>182 21 Prague 8</wicri:noRegion></affiliation></author><author><name sortKey="Kamler, C A" uniqKey="Kamler C">C. A. Kamler</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of Nebraska-Lincoln, 209N WSEC Lincoln</s1><s2>NE 68588-0511</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Nebraska</region></placeName></affiliation></author><author><name sortKey="Darveau, S A" uniqKey="Darveau S">S. A. Darveau</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Nebraska at Kearney, 905 W. 25th</s1><s2>St. Kearney, NE 68849-1150</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>St. Kearney, NE 68849-1150</wicri:noRegion></affiliation></author><author><name sortKey="Exstrom, C L" uniqKey="Exstrom C">C. L. Exstrom</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Nebraska at Kearney, 905 W. 25th</s1><s2>St. Kearney, NE 68849-1150</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>St. Kearney, NE 68849-1150</wicri:noRegion></affiliation></author><author><name sortKey="Slaymaker, L E" uniqKey="Slaymaker L">L. E. Slaymaker</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Nebraska at Kearney, 905 W. 25th</s1><s2>St. Kearney, NE 68849-1150</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>St. Kearney, NE 68849-1150</wicri:noRegion></affiliation></author><author><name sortKey="Vandeventer, A R" uniqKey="Vandeventer A">A. R. Vandeventer</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Chemistry, University of Nebraska at Kearney, 905 W. 25th</s1><s2>St. Kearney, NE 68849-1150</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>St. Kearney, NE 68849-1150</wicri:noRegion></affiliation></author><author><name sortKey="Ianno, Nj" uniqKey="Ianno N">Nj. Ianno</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of Nebraska-Lincoln, 209N WSEC Lincoln</s1><s2>NE 68588-0511</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Nebraska</region></placeName></affiliation></author><author><name sortKey="Soukup, R J" uniqKey="Soukup R">R. J Soukup</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, University of Nebraska-Lincoln, 209N WSEC Lincoln</s1><s2>NE 68588-0511</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Nebraska</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0327203</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0327203 INIST</idno><idno type="RBID">Pascal:11-0327203</idno><idno type="wicri:Area/Main/Corpus">002E09</idno><idno type="wicri:Area/Main/Repository">002E64</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Chalcopyrite</term><term>Copper</term><term>Copper Indium Selenides Mixed</term><term>Copper sulfide</term><term>Inductively coupled plasma</term><term>Mass spectroscopy</term><term>Phonons</term><term>Precursor</term><term>Raman scattering</term><term>Raman spectroscopy</term><term>Solar cells</term><term>Sputter deposition</term><term>Thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Diffusion Raman</term><term>Dépôt pulvérisation</term><term>Précurseur</term><term>Diffraction RX</term><term>Plasma couplé inductivement</term><term>Spectrométrie masse</term><term>Spectrométrie Raman</term><term>Phonon</term><term>Cellule solaire</term><term>Cuivre</term><term>Sulfure de cuivre</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>Aluminium</term><term>Cu2S</term><term>CuInSe2</term><term>8115C</term><term>5280Y</term><term>8460J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuIn<sub>1 -</sub> <sub>x</sub>Al<sub>x</sub>Se<sub>2</sub> (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu-In-Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm<sup>-1</sup> with resolution of 0.3 cm<sup>-1</sup>. Sequential formation of In<sub>x</sub>Se<sub>y</sub>, Cu<sub>2</sub> <sub>-x</sub>Se, CuInSe<sub>2</sub> (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn<sub>1</sub> <sub>-</sub> <sub>x</sub>Al<sub>x</sub>Se2 products, the A<sub>1</sub> phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm<sup>-1</sup> to 186 cm<sup>-1</sup>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>519</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Formation of CuIn<sub>1</sub> <sub>-</sub> <sub>x</sub>Al<sub>x</sub>Se<sub>2</sub> thin films studied by Raman scattering</s1></fA08><fA11 i1="01" i2="1"><s1>OLEJNICEK (J.)</s1></fA11><fA11 i1="02" i2="1"><s1>KAMLER (C. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>DARVEAU (S. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>EXSTROM (C. L.)</s1></fA11><fA11 i1="05" i2="1"><s1>SLAYMAKER (L. E.)</s1></fA11><fA11 i1="06" i2="1"><s1>VANDEVENTER (A. R.)</s1></fA11><fA11 i1="07" i2="1"><s1>IANNO (Nj.)</s1></fA11><fA11 i1="08" i2="1"><s1>SOUKUP (R. J)</s1></fA11><fA14 i1="01"><s1>Department of Chemistry, University of Nebraska at Kearney, 905 W. 25th</s1><s2>St. Kearney, NE 68849-1150</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical Engineering, University of Nebraska-Lincoln, 209N WSEC Lincoln</s1><s2>NE 68588-0511</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2</s1><s2>182 21 Prague 8</s2><s3>CZE</s3><sZ>1 aut.</sZ></fA14><fA20><s1>5329-5334</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000192211190030</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>37 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0327203</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>CuIn<sub>1 -</sub> <sub>x</sub>Al<sub>x</sub>Se<sub>2</sub> (CIAS) thin films (x = 0.06, 0.18, 0.39, 0.64, 0.80 and 1) with thicknesses of approximately 1 μm were formed by the selenization of sputtered Cu-In-Al precursors and studied via X-ray diffraction, inductively coupled plasma mass spectrometry and micro-Raman spectroscopy at room temperature. Precursor films selenized at 300, 350, 400, 450, 500 and 550 °C were examined via Raman spectroscopy in the range 50-500 cm<sup>-1</sup> with resolution of 0.3 cm<sup>-1</sup>. Sequential formation of In<sub>x</sub>Se<sub>y</sub>, Cu<sub>2</sub> <sub>-x</sub>Se, CuInSe<sub>2</sub> (CIS) and CIAS phases was observed as the selenization temperature was increased. Conversion of CIS to CIAS was initiated at 500 °C. For all CuIn<sub>1</sub> <sub>-</sub> <sub>x</sub>Al<sub>x</sub>Se2 products, the A<sub>1</sub> phonon frequency varied nonlinearly with respect to the aluminum composition parameter x in the range 172 cm<sup>-1</sup> to 186 cm<sup>-1</sup>.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="3"><s0>001B50B80Y</s0></fC02><fC02 i1="03" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Diffusion Raman</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Raman scattering</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Difusión Ramán</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dépôt pulvérisation</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Sputter deposition</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Précurseur</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Precursor</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>XRD</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Plasma couplé inductivement</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Inductively coupled plasma</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Spectrométrie masse</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Mass spectroscopy</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Spectrométrie Raman</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Raman spectroscopy</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Phonon</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Phonons</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Solar cells</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Sulfure de cuivre</s0><s5>16</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Copper sulfide</s0><s5>16</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Cobre sulfuro</s0><s5>16</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Aluminium</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Aluminium</s0><s2>NC</s2><s5>19</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Cu2S</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>5280Y</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>220</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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